| PART |
Description |
Maker |
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| SSM3J325F |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??
|
Toshiba Semiconductor
|
| TPCP8002 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCP8404 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)
|
Toshiba Semiconductor
|
| TPCA8030-H |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
|
Toshiba Semiconductor
|
| TPC8209 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
Toshiba Semiconductor
|
| TPCF810307 TPCF8103 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPCF8201 TPCF820107 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC8211 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
